Preparation and Properties of 13N Ultra-High Purity Germanium Single Crystals
13N ultra-high purity germanium single crystal is the core material for producing ultra-high purity germanium detectors.This article obtains reduced germanium ingots by reduction method,then purifies them by horizontal zone refining method to obtain 12N high-purity germanium polycrystals,and finally grows 13N ultra-high purity germanium single crystals by Czochralski method.The performance of 13N ultra-high purity germanium single crystal was tested and studied through low-temperature Hall test,dislocation density test,and deep level transient spectroscopy(DLTS)detection.The low-temperature Hall results show that the average mobility of the crystal head cross-section is 4.515 × 104cm2·V-1·s-1,the carrier concentration is 1.176 × 101ocm-3,and the conductivity is p-type,the dislocation density at the crystal head is 2 256 cm-2.The average mobility of the tail section is 4.620 × 104cm2·V-1·s-1,the carrier concentration is 1.007 × 1010cm-3,and the conductivity type is p-type,the dislocation density at the tail of the crystal is 2 589 cm-2.The concentration of deep level impurities in the crystal is 1.843 x 109cm-3.The results indicate that the crystal is 13N ultra-high purity germanium single crystal.
germanium single crystaldetectormobilitycarrier concentrationdislocation density
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