13N超高纯锗单晶的制备与性能研究
Preparation and Properties of 13N Ultra-High Purity Germanium Single Crystals
顾小英 1赵青松 1牛晓东 1狄聚青 1张家瑛 1肖溢 1罗恺2
作者信息
- 1. 安徽光智科技有限公司,滁州 239000
- 2. 广东先导稀材股份有限公司,清远511517
- 折叠
摘要
13N超高纯锗单晶是制作超高纯锗探测器的核心材料.本文通过还原法获得还原锗锭,再由水平区熔法提纯获得12N高纯锗多晶,最后由直拉法生长得到13N超高纯锗单晶.通过低温霍尔测试、位错密度检测、深能级瞬态谱(DLTS)测试对13N超高纯锗单晶性能进行分析.低温霍尔测试结果显示,晶体头部截面平均迁移率为4.515 ×104cm2·V-1·s-1,载流子浓度为1.176×1010cm-3,导电类型为p型,位错密度为2 256 cm-2;尾部截面平均迁移率为4.620 ×104cm2·V-1·s-1,载流子浓度为1.007×1010cm-3,导电类型为p型,位错密度为2 589 cm-2.晶体深能级杂质浓度为1.843×109cm-3.以上结果表明该晶体是13N超高纯锗单晶.
Abstract
13N ultra-high purity germanium single crystal is the core material for producing ultra-high purity germanium detectors.This article obtains reduced germanium ingots by reduction method,then purifies them by horizontal zone refining method to obtain 12N high-purity germanium polycrystals,and finally grows 13N ultra-high purity germanium single crystals by Czochralski method.The performance of 13N ultra-high purity germanium single crystal was tested and studied through low-temperature Hall test,dislocation density test,and deep level transient spectroscopy(DLTS)detection.The low-temperature Hall results show that the average mobility of the crystal head cross-section is 4.515 × 104cm2·V-1·s-1,the carrier concentration is 1.176 × 101ocm-3,and the conductivity is p-type,the dislocation density at the crystal head is 2 256 cm-2.The average mobility of the tail section is 4.620 × 104cm2·V-1·s-1,the carrier concentration is 1.007 × 1010cm-3,and the conductivity type is p-type,the dislocation density at the tail of the crystal is 2 589 cm-2.The concentration of deep level impurities in the crystal is 1.843 x 109cm-3.The results indicate that the crystal is 13N ultra-high purity germanium single crystal.
关键词
锗单晶/探测器/迁移率/载流子浓度/位错密度Key words
germanium single crystal/detector/mobility/carrier concentration/dislocation density引用本文复制引用
基金项目
国家重点研发计划(2021YFC2902805)
核能开发科研项目(2022)(HNKF20222428)
出版年
2024
国家科技期刊平台
NSTL
万方数据