首页|Ib型金刚石单晶生长及合成腔体温度场分布研究

Ib型金刚石单晶生长及合成腔体温度场分布研究

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  • 国家科技期刊平台
  • NETL
  • NSTL
  • 万方数据
本文利用六面顶压机，在5。7 GPa、1 560～1 600 K的压力温度条件下，分别采用φ15 mm和φ30 mm两种尺寸合成腔体，系统开展了 Ib型金刚石单晶的晶体生长工作，并借助于有限元法对两种尺寸合成腔体的温度场分布进行了研究。首先，借助于有限元法分别对两种尺寸合成腔体的触媒温度场分布进行了模拟。模拟结果揭示了 φ30 mm合成腔体温度场的均匀性要明显优于φ15 mm合成腔体。其次，金刚石晶体生长实验结果表明，采用φ15 mm合成腔体很难实现质量超过1。2 ct(1 ct=0。2 g)的优质Ib型金刚石单晶的生长，而φ30 mm合成腔体更适合用于生长大尺寸优质Ib型金刚石单晶。再次，扫描电子显微镜表面形貌测试结果表明，合成腔体尺寸的扩大不会对Ib型金刚石单晶的表面结晶质量产生显著影响。最后，拉曼光谱的测试结果表明，除了多晶金刚石的结晶质量较差，本研究两种腔体合成的其他金刚石单晶测试样品均具有较好的结晶质量。本研究对宝石级金刚石单晶大尺寸合成腔体的设计、大尺寸金刚石单晶的生长，以及多晶种法金刚石单晶合成技术的完善均具有一定的学术参考价值。
Study on the Growth of Type-Ib Diamond Single Crystal and the Temperature Field Distribution in the Synthesis Cavities
In this paper,type-Ib diamond single crystals,using two different sizes of synthesis cavities of φ15 mm andφ30 mm,were synthesized under 5.7 GPa,1 560～1 600 K,and the temperature field distributions of the two sizes of synthesis cavities were studied using finite element method(FEM).Firstly,the temperature field distributions of two different sizes of synthesis cavities were simulated using finite element method.The average radial temperature gradient and average axial temperature gradient of the φ15 mm synthesis cavity are 0.573 and 5.700 K/mm,respectively.The average radial temperature gradient and average axial temperature gradient of the φ30 mm cavity are 0.093 and 2.280 K/mm,respectively.The simulation results reveal that the uniformity of the temperature field in the φ30 mm synthesis cavity is significantly better than that in the φ15 mm synthesis cavity.Secondly,the reproducible growth of high-quality type-Ib diamond large single crystals was achieved using both synthesis cavities mentioned above.The φ15 mm synthetic cavity is difficult to achieve the growth of high-quality type-Ib diamond single crystals weighing more than 1.2 ct(1 ct=0.2 g),while the φ30 mm synthetic cavity is more suitable for the growth of large-size high-quality type-Ib diamond single crystals.Furthermore,the scanning electron microscopy(SEM)test results show that the surface flatness of high-quality type-Ib diamond single crystals grown using two different sizes of synthesis cavities in this study is good,and the expansion of the synthesis cavity has no significant effect on the crystal quality of Ib diamond single crystal surface.Finally,Raman spectrum test results show that the crystal quality of polycrystalline diamond deteriorates,and other diamond single crystal samples synthesized by two kinds of synthesis cavity in this study have better crystal quality.This research has certain academic reference value for the design of large size synthesis cavity of gem grade diamond single crystal,the growth of large size diamond single crystal,and the perfection of polycrystalline diamond single crystal synthesis technology.

type-Ib diamondhigh pressure and high temperaturetemperature gradient methodcatalysttemperature fieldpolycrystal

肖宏宇、李勇、田昌海、张蔚曦、王强、肖政国、王应、金慧、鲍志刚、周振翔

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铜仁学院物理与电子工程系,铜仁 554300

洛阳理工学院数理部,洛阳 471023

北京中材人工晶体研究院有限公司,北京 100018

Ib型金刚石 高温高压 温度梯度法 触媒 温度场 多晶

国家自然科学基金贵州省科技厅项目贵州省科技厅项目贵州省科技厅项目贵州省科技厅项目贵州省科技厅项目贵州省科技厅项目铜仁学院科研启动基金

12064038黔科合基础-ZK[2023]一般467ZK[2021]重点019ZK[2021]一般021ZK[2021]一般034ZK[2021]一般031ZK[2023]重点049trxyDH2221

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子：0.554
ISSN：1000-985X
年,卷(期)：2024.53(6)
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