首页|ITO/AgNWs/ITO薄膜的制备及其性能研究

ITO/AgNWs/ITO薄膜的制备及其性能研究

扫码查看
原文链接
  • 国家科技期刊平台
  • NETL
  • NSTL
  • 万方数据
随着显示面板向超大尺寸、超高清、可触控的方向发展，单一的氧化铟锡(ITO)薄膜难以满足显示器件越来越高的光电性能要求，因此复合导电薄膜得以发展。本文制备了以二维银纳米线(AgNWs)导电网络嵌入ITO薄膜形成的ITO(222)/AgNWs/ITO(400)复合薄膜结构，系统研究了 AgNWs添加量和上层ITO薄膜溅射温度对复合薄膜结构与光电性能的影响，AgNWs金属导电网络不仅提升了薄膜的电学性能，还保持了优良的光学性能。结果表明，在旋涂600 µL的AgNWs分散液、上层ITO薄膜的溅射温度为175 ℃时，制备的复合ITO薄膜方阻为7。13 Ω/□，在550 nm处透过率为91。52％，且品质因数为57。82 × 10-3 Ω-1，实现了超低电阻率和高可见光透过率复合ITO薄膜的制备。
Preparation and Properties of ITO/AgNWs/ITO Films
With the advancement of display panel technology towards ultra-large size,ultra-high-definition and touch control capability,the traditional single indium tin oxide(ITO)film alone struggles to meet the increasingly demanding photoelectric performance requirements of display devices.Consequently,composite conductive films have been developed.This study fabricated an ITO(222)/AgNWs/ITO(400)composite film structure by embedding a two-dimensional silver nanowires(AgNWs)conductive networks into ITO films.The influences of the AgNWs addition and the sputtering temperature of the upper ITO film on the structural and optoelectronic properties of the composite film were systematically investigated.The AgNWs metal conductive networks not only enhance the electrical properties of the composite films but also maintain excellent optical characteristics.The results demonstrate that with a spin-coating of 600 μL AgNWs dispersion and a sputtering temperature of 175 ℃ for the upper ITO film,the fabricated composite ITO film has a sheet resistance of 7.13 Ω/□,an impressive transmittance of 91.52％at 550 nm,and a figure of merit of 57.82 x 10-3 Ω-1,achieving the preparation of a composite ITO film with ultra-low resistivity and high visible light transmittance.

ITO filmmagnetron sputteringAgNWsconductive networkcomposite filmphotoelectric propertysputtering temperature

杨涛、陈彩明、黄瑜佳、吴少平、徐华蕊、汪坤喆、朱归胜

展开 >

桂林电子科技大学材料科学与工程学院,电子信息材料与器件教育部工程研究中心,广西信息材料重点实验室,桂林 541004

广西中沛光电科技有限公司,来宾 546100

ITO薄膜 磁控溅射 AgNWs 导电网络 复合薄膜 光电性能 溅射温度

国家自然科学基金国家自然科学基金广西科技计划广西科技计划广西科技计划桂林市科学研究与技术开发计划电子信息材料与器件教育部工程研究中心重点基金

62364007U21A2065桂科AA21077018桂科AD23023013桂科AB2307521820220120-1EIMD-AA202001

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子：0.554
ISSN：1000-985X
年,卷(期)：2024.53(7)
  • 32