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宽禁带半导体ZnGa2O4研究进展

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宽禁带半导体材料因独特的物理和化学特性,在光电器件等领域展现出巨大的潜力,受到了越来越多的研究和关注。镓酸锌(ZnGa2O4)作为一种宽禁带半导体材料,具有禁带宽度大、结构独特、热稳定性良好等优点,在日盲紫外光电探测、X射线探测等领域具有广阔的应用前景。本文从ZnGa2O4的基本结构特性出发,详细介绍了 ZnGa2O4的禁带宽度、光电性能以及ZnGa2O4体块单晶和薄膜的制备方法。结合国内外学者近期的一些研究成果,概述了 ZnGa2O4在多个领域的应用前景,特别是日盲紫外光电探测、忆阻器、X射线探测和功率器件等方面的研究进展。最后对ZnGa2O4材料的未来发展方向提出了展望,指出可进一步提升ZnGa2O4材料的质量和性能,以提升器件性能,满足更高级别的应用需求。
Research Progress of Wide Bandgap Semiconductor ZnGa2O4
;Due to their unique physical and chemical properties,wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices,and have received more and more research and attention.Zinc gallate(ZnGa2O4)is a wide bandgap semiconductor material,showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap,unique structure and good thermal stability.In this paper,based on the basic structural characteristics of ZnGa2O4,the bandgap,photoelectric properties of ZnGa2O4,the preparation methods of ZnGa2O4 bulk single crystal and thin film are introduced in detail.Combined with the recent research results of domestic and foreign scholars,the application prospects of ZnGa2O4 in many fields are summarized,especially the research progress of solar-blind ultraviolet photoelectric detection,memristor,X-ray detection and power devices.Finally,the future development direction of ZnGa2O4 is prospected,and it is pointed out that the quality and performance of ZnGa2O4 materials can be further improved to improve device performance and meet higher level application requirements.

ZnGa2O4wide bandgap semiconductorphotoelectric propertypreparation methodapplication

雷莎莎、龚巧瑞、赵呈春、孙晓慧、杭寅

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上海工程技术大学数理与统计学院,上海 201600

中国科学院上海光学精密机械研究所先进激光与光电功能材料部,上海 201800

中国科学院大学材料与光电研究中心,北京 100049

ZnGa2O4 宽禁带半导体 光电性能 制备方法 应用

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子:0.554
ISSN:1000-985X
年,卷(期):2024.53(8)
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