首页|二维MXene材料CrVCF2的电子性质和磁性的第一性原理研究

二维MXene材料CrVCF2的电子性质和磁性的第一性原理研究

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采用基于密度泛函理论的第一性原理研究了—F官能团对Janus型MXene二维材料CrVC的结构、电子性质和磁性的影响.计算结果表明,—F官能团改变了 CrVC的电子性质和磁性,CrVCF2的9种可能结构的基态是铁磁态,其中CrVCF2-33结构的能量最低,是最为稳定的基态结构,其磁矩为5.01 μB,带隙为0.099 eV,具有半导体特性.在施加-4%~+4%的双轴拉伸与压缩应变时,CrVCF2-33的总磁矩保持不变;能量随着压缩或拉伸应变的增大而变大,但变化的幅度低于0.2 eV;带隙在应变的作用下会发生改变,当拉伸应变为2.4%时,带隙减小到0.005 eV,接近于零,可看作是自旋零带隙半导体.由此可知,适度的应变可调节CrVCF2材料的电子能带结构,甚至可形成自旋零带隙半导体,这在自旋电子学领域具有潜在的应用价值.
First-Principles Study on the Electronic and Magnetic Properties of MXene 2D Material CrVCF2
The effects of—F functional group on the structure,electronic properties and magnetic properties of Janus-type MXene 2D material CrVC were studied by first-principles of density functional theory.The calculation results indicate that the—F functional group changes the electronic properties and magnetic properties of CrVC.The nine possible structures of CrVCF2 exhibit ferromagnetic behavior,among which the structure of CrVCF2-33 has the lowest energy and is the ground state,with a magnetic moment of 5.01 µB and a band gap of 0.099 eV,exhibiting semiconductor characteristics.The total magnetic moment of CrVCF2-33 remains unchanged when-4%~+4%biaxial strain is applied;the energy increases with either compression or tension strain,but the change is less than 0.2 eV;the band gap changes under the action of strain,when the tensile strain is 2.4%,the band gap decreases to 0.005 eV,which is close to zero.It can be considered a spin-zero band gap semiconductor.The results show that moderate strain can adjust the electronic structure of the CrVCF2 material,and it can even become a spin-zero band gap semiconductor,indicating its potential application value in the field of spintronics.

first-principlesMXene material—F functional groupelectronic structuremagnetismstrain

刘晓莹、黄海深、孙丽、潘孟美、尚真真

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海南师范大学教师教育学院,海口 571158

遵义师范学院物理与电子科学学院,遵义 563006

海南师范大学物理与电子工程学院,海口 571158

琼台师范学院理学院,海口 571127

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第一性原理 MXene材料 —F官能团 电子结构 磁性 应变

海南省自然科学基金面上项目贵州省遵义市市校联合基金遵义师范学院科研项目

121MS032遵市科合HZ字[2022]128号遵师BS[2022]10号

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子:0.554
ISSN:1000-985X
年,卷(期):2024.53(8)
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