Stannous sulfide(SnS)was investigated as an absorbing layer for solar cells due to its suitable electrical and optical properties.Spiro-OMeTAD is commonly employed as a hole transport layer to enhance the performance of solar cells.The ZnS/SnS/Spiro-OMeTAD solar cell was designed and simulated by the wxAMPS software.The effects of the Spiro-OMeTAD hole transport layer on the properties of solar cells were mainly studied,namely the effects on open-circuit voltage,short-circuit current density,filling factor,photoelectric conversion efficiency and quantum efficiency.The results show that the open-circuit voltage of the ZnS/SnS/Spiro-OMeTAD solar cells increase to 0.958 V and short-circuit current increase to 32.96 mA/cm2 when the Spiro-OMeTAD HTL is added.The fill factor and photoelectric conversion efficiency are 79.26％and 25.07％,respectively.The performance of the solar cells depends on the thickness of each layer,doping concentration,Gaussian defect state density,and temperature.The results demonstrate that the Spiro-OMeTAD,as a hole transport layer,is beneficial for enhancing various performance aspects of solar cells.Moreover,the ZnS/SnS/Spiro-OMeTAD exhibits a great potential as a photovoltaic device structure.
关键词
硫化亚锡/硫化锌/Spiro-OMeTAD/空穴传输层/异质结太阳能电池/wxAMPS/缺陷
Key words
stannous sulfide/zinc sulphur/Spiro-OMeTAD/hole transport layer/heterojunction solar cell/wxAMPS/defect
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