Performance of In3+Doped Zn3Ga2Ge2O10∶Cr3+Far-Red Light Emitting Materials for Plant Light Supplement
Cr3+doped Zn3Ga2Ge2O10∶Cr3+far-red phosphor was synthesized by the high temperature solid state method,and the luminescent properties of Zn3Ga2Ge2O10∶Cr3+was tuned by introducing In3+.The crystal structure of Zn3(Ga1-xInx)2Ge2O10∶2％Cr3+was determined by X-ray diffraction(XRD),and the luminescent properties were analysed using room-temperature photoluminescence spectra and thermoluminescence spectra.Zn3(Ga1-xInx)2Ge2O10∶2％Cr3+exhibits a broad emission band,which is composed of two luminescent peaks at 705 and 721 nm from the transitions of 4T2(4F)→4 A2 and 2E→4A2 respectively.As the In3+doping concentration increases,the emission spectrum of Zn3(Ga1-x Inx)2 Ge2 O10∶2％Cr3+broadens.This broadening is attributed to the changes in the crystal field environment around the Cr3+,which leads to an increase in the full width at half maximum(FWHM)of the material's emission spectrum as the crystal field splitting becomes more pronounced.Therefore,Zn3(Ga1-x Inx)2 Ge2 O10∶2％Cr3+phosphors are expected to be applied in the field of plant lighting for their luminescence characteristics matching with the absorption spectrum of phytochrome in plants.Additionally,as the In3+doping concentration increases,the phosphor material exhibits a red long afterlow phenomenon,and its afterglow duration is related to the In3+doping concentration.
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