首页|Ⅵ族元素修饰对二维AlN电子性质影响的第一性原理研究

Ⅵ族元素修饰对二维AlN电子性质影响的第一性原理研究

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采用密度泛函理论的第一性原理计算方法,研究了 Ⅵ族元素(O、S、Se、Te)修饰对二维AlN电子性质的影响.计算结果表明,O修饰后,二维AlN体系的能带发生劈裂,从而转变为磁性材料;S、Se和Te修饰后,二维AlN电子态密度曲线自旋向上和自旋向下完全对称,形成了非磁性结构.从态密度图可以看出,费米能级附近的态密度主要由修饰原子的p态电子和N原子的p态电子贡献,导带底部逐渐向低能区移动,导致二维AlN的吸收波长阈值从紫外线区域向可见光移动.因此,修饰的二维AlN光催化效率提高,并有应用于可见光响应的光电子和自旋电子器件的可能.
First-Principles Study on the Effect of Ⅵ Group Elements Modification on the Electronic Properties of Two-Dimensional AlN
Effect of Ⅵ group elements(O,S,Se,Te)modification on the electronic properties of two-dimensional AlN were investigated by first-principles calculation method using density functional theory.The calculation results indicate that after O modification,the energy bands of the two-dimensional AlN system undergo splitting,thereby transforming into magnetic materials.After modification with S,Se and Te,the electron density of states curves of the two-dimensional AlN exhibit complete spin up and spin down symmetry,forming a non-magnetic structure.From the density of states graph,it can be seen that the density of states near the Fermi level is mainly contributed by the p-state electrons of the modified atom and the p-state electrons of the N atom.The bottom of the conduction band gradually moves towards the lower energy region,causing the absorption wavelength threshold of two-dimensional AlN to shift from the ultraviolet region to visible light.Therefore,the modified two-dimensional AlN improves its photocatalytic efficiency and has the potential to be used in the visible light responsive optoelectronic and spin electronic devices.

two-dimensional AlNⅥ group elementmodificationfirst-principleelectronic structuremagnetic

莫秋燕、欧满琳、张颂、荆涛、吴家隐

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凯里学院大数据工程学院,凯里 556011

凯里学院理学院,凯里 556011

广东开放大学(广东理工职业学院)工程技术学院,广州 510091

二维AlN Ⅵ族元素 修饰 第一性原理 电子结构 磁性

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子:0.554
ISSN:1000-985X
年,卷(期):2024.53(9)