首页|GaFeO3∶Mg晶体的生长及磁学性能研究

GaFeO3∶Mg晶体的生长及磁学性能研究

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  • 国家科技期刊平台
  • NETL
  • NSTL
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本文利用光学浮区法生长出了直径为7 mm的铁电单晶MgxGa1-xFeO3(x=0。02、0。05、0。07和0。10)，研究了Mg2+对GaFeO3(GFO)晶体饱和磁化强度和磁性转变温度的作用。通过XRD测试了晶体的结构和物相，结果显示，所有制备的晶体样品对应标准晶体卡库GFO(PDF#76-1005)的衍射特征，无其他杂相出现。XRD精修结果表明，该晶体结构为正交结构，空间群为Pna21，晶格常数和晶胞体积随着Mg2+掺杂量的增加，呈现先增加后减小的趋势。通过综合物性测量系统研究了晶体的磁性能，结果表明，磁性转变温度和饱和磁化强度随着Mg2+掺杂量的增加，同样呈现先增加后减小的趋势。当Mg2+掺杂量x=0。07时，磁性转变温度和饱和磁化强度达到最大，分别为187。82 K、8。75 emu/g，达到了掺杂改性的目的。
Growth and Magnetic Properties of GaFeO3∶Mg Crystals
Multiferroic materials can realize the mutual coupling between force,electricity,magnetism and other physical fields,and have important application prospects in the field of small size,fast response and low power consumption of magnetoelectric devices.GaFeO3 is a highly promising multiferroic material featuring high spontaneous magnetization and polarization beyond room temperature.In this study,Ferroelectric MgxGa1_xFeO3(x=0.02,0.05,0.07 and 0.10)single crystals with a diameter of about 7 mm were grown by light floating zone method.The effect of Mg2+on the saturation magnetization and magnetic transition temperature of GaFeO3(GFO)crystals were studied.The structure and phase of the crystal were analyzed through XRD,the results show that all the prepared samples correspond to the diffraction characteristics of the standard crystal card library GFO(PDF#76-1005),and no other heterophase appears.The XRD refinement results indicate that,the crystal structure is orthogonal and its space group is Pna21.As the concentration of Mg2+rises,the lattice constant and cell volume initially increase and subsequently decrease.Additionlly,the magnetic properties of the crystal were studied through a comprehensive physical property measurement system,the magnetic transition temperature and saturation magnetization of the grown crytals also increase firstly and then decrease with the increase of Mg2+doping content.When the Mg2+doping amount is 0.07,the magnetic transition temperature and saturation magnetization reach the maximum values of 187.82 K and 8.75 emu/g,respectively,which achieves the purpose of doping modification.

ferroelectric single crystalGaFeO3∶Mgoptical floating zone methodsaturation magnetizationmagnetic transition temperaturecoercive field

王文凯、潘秀红、胡雨青、刘学超、陈小红、陈锟、方婧红、贺欢、倪津崎

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上海理工大学材料与化学学院,上海 200093

中国科学院上海硅酸盐研究所,上海 200050

安徽工业大学材料科学与工程学院,马鞍山 243002

铁电单晶 GaFeO3∶Mg 光学浮区法 饱和磁化强度 磁性转变温度 矫顽场

国家重点研发计划中国载人航天项目上海市科技项目上海市科技项目

2021YFA0716304YYMT1201-EXP022251110030023DZ2201500

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子：0.554
ISSN：1000-985X
年,卷(期)：2024.53(10)