8英寸SiC晶圆制备与外延应用
Preparation and Epitaxy Application of 8 Inch SiC Wafers
韩景瑞 1李锡光 1李咏梅 1王垚浩 2张清纯 3李达 4施建新 4闫鸿磊 4韩跃斌 4丁雄杰1
作者信息
- 1. 广东天域半导体股份有限公司,东莞 523808
- 2. 广州南砂晶圆半导体技术有限公司,广州 511458
- 3. 清纯半导体(宁波)有限公司,宁波 315336
- 4. 芯三代半导体科技(苏州)股份有限公司,苏州 215021
- 折叠
摘要
碳化硅(SiC)是制作高温、高频、大功率电子器件的理想电子材料之一,近20年来随着SiC材料加工技术的不断提升,其应用领域不断扩大.目前SiC芯片的制备仍然以6英寸(1英寸=25.4 mm)晶圆为主,但是行业龙头企业已经开始研发基于8英寸SiC晶圆的下一代器件和芯片.本研究联合国内SiC产业链上、下游龙头企业,推进8英寸SiC芯片国产研发,尤其是关键的晶圆制备和外延应用环节.本文采用扩径生长法制备了 8英寸导电型4H-SiC衬底晶圆,其平均基平面位错(BPD)密度低至251 cm-2,平均螺位错(TSD)密度小于1 cm-2,实现了近"零TSD"和低BPD密度的8英寸导电型4H-SiC衬底晶圆的制备,可以满足生产需要.采用国产8英寸外延设备和开发工艺包,实现了速率为68.66 µm/h的快速外延生长,厚度不均匀性为0.89％,掺杂不均匀性为2.05％,这两个指标已经达到了优良6英寸外延膜的水平,完全可以满足生产需要.与国外已发布的8英寸外延结果对比,厚度和掺杂均匀性均优于国外数据,而缺陷密度只有国外数据的1/4.本文设计和实施了多片重复性试验,验证了 8英寸外延的稳定性.
Abstract
Silicon carbide(SiC)is one of the superior materials used in the manufacture of electronic components designed to work at high temperatures,high frequencies and high-power.In the past two decades,the application of SiC materials has been expanding as a result of much improved production and processing techniques.Although most SiC chips are still mainly made from 6 inch(1 inch=25.4 mm)wafers,leading manufacturers have begun developing next-generation parts and chips based upon 8 inch SiC wafers.This study collaborates with leading enterprises in the upstream and downstream of the domestic silicon carbide industry chain in order to facilitate domestic production of 8 inch SiC chips,with the focus being wafer preparation and epitaxial growth.In this work,8 inch conductive 4H-SiC substrate wafer was prepared by diameter expansion growth,with low average base plane dislocation(BPD)density(251 cm-2)and virtually'zero threading screw dislocation(TSD)'density(＜1 cm-2)that meet the production requirements.Based on these 8 inch substrates,we achieve fast epitaxial growth(68.66 μm/h)with domestically produced 8 inch epitaxy equipment and processing packages.The thickness uniformity of the resultant wafers is 0.89％and the doping uniformity is 2.05％.These parameters,as well as the defect density,are on par with those of high-quality 6-inch wafers,fully meeting production requirements.The 8 inch wafers prepared in this paper are better than those described in international publications in terms of thickness and doping uniformity.The defect density is only 1/4 of international data.In this paper,multi-wafer repetative text was designed and executed,to verify the stability of 8 inch epitaxy.
关键词
碳化硅/8英寸/晶圆/外延/缺陷密度/掺杂均匀性Key words
silicon carbide/8 inch/wafer/epitaxy/defect density/doping uniformity引用本文复制引用
基金项目
江苏省重大科技成果转化项目(BA2022082)
出版年
2024
国家科技期刊平台
NSTL
万方数据