首页|Co3O4@BiVO4复合薄膜的制备及其光电性能

Co3O4@BiVO4复合薄膜的制备及其光电性能

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本文以FTO导电玻璃作为基底,通过水热法成功制备出了形貌可控的Co3O4薄膜样品,利用制备出的Co3O4薄膜样品作为基底,控制旋涂BiVO4的次数,在其表面成功制得不同BiVO4量的Co3O4@BiVO4复合薄膜样品。利用X射线衍射仪(XRD)和场发射扫描电子显微镜(FESEM)等对复合薄膜的物相和微观形貌进行分析,并采用UV-3600紫外-可见分光光度计和电化学工作站对其光吸收性能和光电性能进行了测定。结果表明:所制备的Co3O4@BiVO4复合薄膜表面连续、均匀、致密;相较于纯Co3O4薄膜,Co3O4@BiVO4复合薄膜的光吸收能力增强;光照下Co3O4@BiVO4复合薄膜的光电性能优于纯Co3O4薄膜;经旋涂三次的Co3O4@BiVO4-3复合薄膜光电性能最佳,其最大光电流约为纯Co3O4薄膜最大光电流的18。4倍,该器件响应度为105。5 μA/W,探测率可达1。988 ×1011 Jones。
Preparation and Photoelectric Properties of Co3O4@BiVO4 Composite Thin Films
;In this paper,FTO conductive glass was used as a substrate to successfully prepare Co3O4 thin films with controlled morphology by hydrothermal method.Using the prepared Co3O4 thin films as the base,Co3O4@BiVO4 composite thin films with varying amounts of BiVO4 were successfully prepared by controlling the number of spin-coating cycles.The phase composition and microstructure were analyzed using X-ray diffraction(XRD)and field-emission scanning electron microscopy(FESEM).Additionally,their optical absorption and photoelectric properties were measured using a UV-3600 UV-Vis spectrophotometer and an electrochemical workstation.Results indicate that,based on the XRD patterns of the Co3O4@BiVO4 composite thin films,the composite materials were successfully prepared.From the FESEM images,it can be observed that the prepared Co3O4@BiVO4 composite thin films possess a continuous,uniform,and dense surface,with the Co3O4 thin films growing uniformly as nanowires,and the spin-coated BiVO4 uniformly coating the surfaces of Co3O4 nanowires in a block-like manner.The optical absorption spectrum reveals enhanced light absorption of the Co3O4@BiVO4 composite thin films compared to pure Co3O4 thin films.Under zero bias voltage and illumination,the photoelectrical performance of the Co3O4@BiVO4 composite thin films surpasses that of pure Co3O4 thin films.Electrochemical test results demonstrate that the Co3O4@BiVO4-3 composite thin films,which were spun-coated three times,showing optimal photoelectrical performance,with a maximum photocurrent approximately 18.4 times that of pure Co3O4 thin films.The responsivity of the device is 105.5 μA/W,with a detectivity of up to 1.988 × 1011 Jones.

Co3O4BiVO4composite filmphotoelectric propertyphotocurrentdetectivity

从文博、彭韶龙、王航、李丽华、黄金亮

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河南科技大学材料科学与工程学院,洛阳 471000

Co3 O4 BiVO4 复合薄膜 光电性能 光电流 探测率

高端外国专家项目

GDW2017410125

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子:0.554
ISSN:1000-985X
年,卷(期):2024.53(10)