首页|静电场对超声雾化热解喷涂制备TiO2薄膜的影响研究

静电场对超声雾化热解喷涂制备TiO2薄膜的影响研究

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基于自主搭建的超声雾化热解喷涂装置进行静电场作用耦合,通过在反应沉积腔体的上、下壁面间施加非匀强电场,探究了形成静电场所施加的直流电压对喷涂TiO2薄膜结构与性能的影响。电场作用下雾滴颗粒被极化并获得垂直衬底表面的动量,克服了热泳力作用的影响,提高了钛源前驱体在衬底表面的附着效率,同时增强了薄膜结晶性能及成膜均匀性。结果表明,当加载电压为1。0 kV时,获得了优化锐钛矿相TiO2薄膜,其(101)晶面半峰全宽为0。29°,平均晶粒尺寸达到94。19 nm,可见光区平均透过率为85%,表面粗糙度为16。70 nm。通过静电场的施加,调控了衬底近表面处入射粒子的动量,构建了更有利于TiO2薄膜生长的稳定环境,为TiO2薄膜制备工艺的优化提供了参考。
Effect of Electrostatic Field on the Preparation of TiO2 Thin Films by Ultrasonic Atomised Pyrolytic Spraying
Based on the independent ultrasonic atomised pyrolytic spraying device,an electrostatic field coupling is carried out by applying non-uniform electric field between the upper and lower walls of the reactive deposition chamber.Then,the effect of applied DC voltage on the structure and properties of the sprayed TiO2 thin film was conducted.Upon the action of the electric field,the droplet particles are polarized and gain momentum perpendicular to the substrate surface.The Coulomb force produced by electric field cancels the influence of the thermophoresis force,and then improves the adhesion efficiency of titanium precursor on the near surface of the substrate.Thus,the crystallization property and film formation uniformity of the film is greatly enhanced.The results show that when the applied voltage is 1.0 kV,the anatase TiO2 thin film is optimized.Its(101)crystal plane has a full width at half maximum of 0.29°,an average grain size of 94.19 nm,an average visible light transmittance of 85%and a surface roughness of 16.70 nm.By applying electrostatic fields,the momentum of incident particles near the surface of the substrate is regulated and a stable environment more conducive to the growth of TiO2 thin film is constructed.This work provides a reference for the optimization of TiO2 thin film preparation process.

TiO2 thin filmultrasonic atomised pyrolytic sprayingthermophoresis forceelectrostatic fieldcrystal growth

李冬梅、周俊、吴非凡、吕家波、肖黎、龚恒翔

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重庆理工大学理学院,重庆 400054

龙泰洋健(重庆)医疗科技有限公司,重庆 402760

TiO2薄膜 超声雾化热解喷涂 热泳力 静电场 晶体生长

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子:0.554
ISSN:1000-985X
年,卷(期):2024.53(12)