Experimental study of shot noise in GaAs/AlGaAs heterojunction quantum dot contact
Quantum point contact is a kind of quasi one-dimensional confined quantum system with rich physi-cal connotation,and it is an ideal system for studying electron quantum transport.Shot noise generated by quantum point contact has become a hot spot of increasing interest in mesoscopic physics.In this paper,a quantum point contact device is designed in the traditional GaAs/AlGaAs material.The shot noise of the de-vice under zero magnetic field and high magnetic field is measured respectively.The variation law of the shot noise of the device under extremely low temperature of 20 mK with the source-drain bias,gate voltage and magnetic field is analyzed.The variation of Fano factor with gate voltage is obtained and compared with the conductance platform of the device,the scattering behavior of electrons in the first two hall channels from closing to opening is analyzed.Research in this paper will give us a deep understanding of the quantum trans-port properties of electrons in quantum point contact.
Quantum point contactQuantum transport of electronsShot noiseFano factor
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