电感耦合等离子发射光谱检测外排硅粉中硅含量
Determination of Silicon Content in Discharged Silicon Powder by ICP-OES
李日红 1慕道焱 1侯海波 1靳晓东 1冯曙光1
作者信息
- 1. 内蒙古通威高纯晶硅有限公司,内蒙古包头,014010
- 折叠
摘要
多晶硅冷氢化工艺中会排出未完全反应的硅粉即为外排硅粉,外排硅粉中含有部分未完全反应的硅,需要对其含量进行准确检测以方便下游生产厂家的回收利用.采用氢氟酸、硝酸对外排硅粉进行消解,使用ICP-OES检测消解液中硅含量.对不同批次外排硅粉试样中硅含量进行检测,检测结果显示RSD＜0.5％,加标回收率95.1％～104.3％.相对于传统氟硅酸钾容量法,ICP-OES较为简便易于操作,为外排硅粉中有效硅含量检测提供参考.
Abstract
In the cold hydrogenation process of polycrystalline silicon,partially reacted silicon powder is discharged,which is called discharged silicon powder.The discharged silicon powder contains some partially unreacted silicon,and its content needs to be accurately detected to facilitate the recycling and utilization of downstream manufacturers.Use hydrofluoric acid and nitric acid to digest the discharged silicon powder,and use ICP-OES to detect the silicon content in the digestion solution.The silicon content in different batches of discharged silicon powder samples was tested,and the test results showed RSD＜0.5％,with a spiked recovery rate of 95.1％～104.3％.Compared to the traditional potassium fluorosilicate volumetric method,ICP-OES is simpler and easier to operate,providing a reference for detecting the effective silicon content in discharged silicon powder.
关键词
外排硅粉/ICP-OES/硅含量/消解Key words
discharge silicon powder/ICP-OES/silicon content/digestion引用本文复制引用
出版年
2024
NETL
NSTL
万方数据