Application Progress of Sapphire Substrate in Gallium Nitride Epitaxial Growth Technology
The third-generation semiconductor technology mainly involves wide bandgap semiconductor materials,among which gallium nitride(GaN)materials have received widespread attention due to their excellent electrical and thermal properties,especially their application potential in high temperature,high power,and high frequency environments.In this research field,sapphire substrates(α-Al2O3)are mainly single crystal alumina materials,which are mainly used as substrate materials in gallium nitride(GaN)epitaxial growth technology.Sapphire substrates not only improve the quality of GaN films,but also provide critical support for the manufacturing of high-performance third-generation semiconductor devices.This article further elaborates on the processing technology,application fields,and challenges faced by sapphire substrates.