首页|蓝宝石衬底在氮化镓外延生长技术中的应用进展

蓝宝石衬底在氮化镓外延生长技术中的应用进展

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第三代半导体技术主要涉及宽禁带半导体材料,其中氮化镓(GaN)材料因其卓越的电学和热学性能而受到广泛关注,特别是它们在高温、高功率和高频率环境下的应用潜力.在这一研究领域中,蓝宝石衬底(α-Al2O3)主要为单晶氧化铝材料,其主要作为基板材料应用于氮化镓(GaN)外延生长技术中.蓝宝石衬底在提高GaN薄膜质量的同时,也为高性能第三代半导体器件的制造提供关键支持.本文就蓝宝石衬底的加工工艺、应用领域及面临的挑战进行进一步阐述.
Application Progress of Sapphire Substrate in Gallium Nitride Epitaxial Growth Technology
The third-generation semiconductor technology mainly involves wide bandgap semiconductor materials,among which gallium nitride(GaN)materials have received widespread attention due to their excellent electrical and thermal properties,especially their application potential in high temperature,high power,and high frequency environments.In this research field,sapphire substrates(α-Al2O3)are mainly single crystal alumina materials,which are mainly used as substrate materials in gallium nitride(GaN)epitaxial growth technology.Sapphire substrates not only improve the quality of GaN films,but also provide critical support for the manufacturing of high-performance third-generation semiconductor devices.This article further elaborates on the processing technology,application fields,and challenges faced by sapphire substrates.

wide bandgapsapphiresingle crystal aluminum oxidegallium nitrideepitaxial growth

杨志伟、Asim Abas

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吉林工业职业技术学院智能制造学院,吉林 吉林 132013

中国科学院合肥物质科学研究院,安徽 合肥 230031

宽禁带 蓝宝石衬底 单晶氧化铝 氮化镓 外延生长

2024年度吉林省教育厅科学研究项目

JJKH20241130KJ

2024

山东工业技术

山东工业技术

ISSN:
年,卷(期):2024.(3)
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