Preparation of Tungsten Oxide-Zinc Oxide Memristor and Its Neural Synaptic Property
To realize application of memristors in neuromorphic computation,resistive layers of tungsten oxide and zinc oxide heterogeneous junction as well as a silver top electrode were grown on an indium tin oxide conductive glass substrate by using radio frequency magnetron sputtering technology,and a tungsten oxide-zinc oxide memristor was prepared.Structure,chemical composition,and electrical properties of the prepared memristor were characterized and tested.The results show that the prepared memristor has neural synaptic property similar to biology,and the resistive behavior is dominated by interfacial barrier regulation mechanism.The average accuracy of the prepared memristor cross array for classification recognition is 86.3%,which is close to that of central processing unit network 87.4%,and it can be used for neuromorphic computation.
memristorneural synapseradio frequency magnetron sputteringneuromorphic computationclassification recognitionneural network
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