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二硫化钼的制备方法

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在集成电路发展到如今辉煌的时代背后,是长年指导行业发展前景的摩尔定律的贡献.但随着晶体管的尺寸不断缩小与厚度不断减薄,硅材料本身逼近了自身的物理极限且不再适用摩尔定律.因此,科学家们渴望通过引入包括二维材料在内的新材料,来解决这一难题.二硫化钼因其特殊性质而备受关注,而大规模使用二硫化钼就需要对制备方法深入研究.影响单层二硫化钼合成的因素很多,比如CVD法中反应源的量、气压、衬底、两个源的反应温度、源的升温速度、保温时间、钼源-硫源衬底之间的相对位置、气体流量等.总之归纳这些反应条件,其主要影响的是硫源和钼源在反应衬底位置的浓度和反应速度.本文总结CVD不同条件下对合成单层二硫化质量的影响并对其发展趋势进行展望.
Preparation Method of Molybdenum Disulfide
Behind the brilliant era of integrated circuit development,there is the contribution of Moore's Law,which has guided the industry's development prospects for many years.But as the size and thickness of transistors continue to shrink,silicon materials themselves have approached their physical limits and are no longer applicable to Moore's Law.Therefore,scientists are eager to solve this problem by introducing new materials,including two-dimensional materials.Molybdenum disulfide has attracted much attention due to its special properties,and the large-scale use of molybdenum disulfide requires in-depth research on preparation methods.There are many factors that affect the synthesis of monolayer molybdenum disulfide,such as the amount of reaction source,pressure,substrate,reaction temperature of the two sources,heating rate of the sources,holding time,relative position between molybdenum source and sulfur source substrate,gas flow rate,etc.in the CVD method.In summary,these reaction conditions mainly affect the concentration and reaction rate of sulfur and molybdenum sources at the reaction substrate position.This article summarizes the influence of different conditions on the quality of synthesized monolayer disulfide by CVD and looks forward to its development trend.

new materialsmolybdenum disulfidepreparation methodCVD

刘致远、郑嘉璐

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西安石油大学材料科学与工程学院, 陕西 西安 710065

新材料 二硫化钼 制备方法 CVD

2024

山西化工
山西省煤化工发展促进中心 山西省化工学会

山西化工

影响因子:0.293
ISSN:1004-7050
年,卷(期):2024.44(1)
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