TCAD Simulation of Heterogeneous Gate Dielectric Double-Gate Tunnel FET
Heterogeneous gate dielectric double-gate tunneling field effect transistors have a special structure that improves the electrical characteristics of the devices compared to conventional DGTFET.In this study,different DGTFETs were built with or without HD and Dielectric Pocket structures,the effects of the gate dielectric length,dielectric constant,and Pocket thickness on the device open state current(Ion),the bipolar characteristics,and the subthreshold swing(SS)were quantitatively analyzed.The results indicate that Ion can be enhanced to 5.17 × 10-5 A/µm with increasing dielectric permittivity,but bipolar currents is similarly increased,SS was reduced to 28.3 mV/dec due to the improvement of switching-state current,while the different length of the gate dielectric didn't have any significant effect on the device performance.On the bipolarity,the increase in the thickness of the Pocket region makes the gate-drain tunneling width increase and the Iamb can be reduced to the order of 1.0 × 10-17 A/μm,thus suppressing the bipolarity,with no significant effect on other features of the device.
heterogeneous gate dielectricHigh-k Pockettunnel field effect transistorTCAD simulation
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NSTL
万方数据
维普
