Influence of In-doping on resistivity of chemical bath deposited SnS films
SnS and SnS:In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively.Energy dispersive spectroscopy (EDS) showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS:In films were evaluated from the optical transmission spectra.
tin sulfide, chemical bath deposition, doping.
葛艳辉、郭余英、史伟民、邱永华、魏光普
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School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
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