首页|Effects of HfO2 buffer layers on the dielectric property and leakage current of Ba0.6Sr0.4TiO3 thin films by pulsed laser deposition

Effects of HfO2 buffer layers on the dielectric property and leakage current of Ba0.6Sr0.4TiO3 thin films by pulsed laser deposition

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Ba0.6Sr0.4TiO3 (BST) thin films with and without HfO2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO2 thickness increasing. The leakage current analysis based on Schottky emission indicated an improvement of the BST/Pt interface with HfO2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO2 buffered BST thin film achieved 0.009 8, 21.91% (Emax = 200 kV/cm), 22.40 at 106 Hz, respectively.

Ba0.6Sr0.4TiO3 (BST) thin filmHfO2 buffer layerdielectric propertyleakage currentSchottky emission

GENG Yan、CHENG Jin-rong、YU Sheng-wen、WU Wen-biao

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School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China

Shanghai Education Committee FoundationShanghai Education Committee FoundationNSFC-RS International Joint ProjectShanghai Rising Star Program

07ZZ1408SG415071113024108QH14008

2010

10.1007/s11741-010-0677-1

上海大学学报(英文版)
上海大学

上海大学学报(英文版)

影响因子：0.196
ISSN：1007-6417
年,卷(期)：2010.14(6)
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