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Characteristics of bottom gate a-Si TFT array for AM-OLEDs

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The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm2/(V·s),on/off ratio of 7.5×106 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiNx insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) technology.

amorphous silicon (a-Si)transistorarraystability

ZHANG Hao、CHEN Long-long、SHI Ji-feng、LI Chun-ya、LU Lin、LI Xi-feng、ZHANG Jian-hua

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School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China

Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China

国家高技术研究发展计划(863计划)国家高技术研究发展计划(863计划)

2008AA03A3362010AA03A337

2011

10.1007/sl1741-011-0728-3

上海大学学报(英文版)
上海大学

上海大学学报(英文版)

影响因子：0.196
ISSN：1007-6417
年,卷(期)：2011.15(4)
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