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Effect of annealing on wet etch of amorphous IGZO thin film

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Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) array process.

amorphous InGaZnO (a-IGZO)annealingetching

CHEN Long-long、SHI Ji-feng、LI Qian、LI Xi-feng、ZHANG Jian-hua

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Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China

Science and Technology Commission of Shanghai MunicipalityScience and Technology Commission of Shanghai Municipality

0911110070210DZ1100102

2011

10.1007/sl1741-011-0730-1

上海大学学报(英文版)
上海大学

上海大学学报(英文版)

影响因子：0.196
ISSN：1007-6417
年,卷(期)：2011.15(4)
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