首页|Effects of ultrasonic bonding parameters on reliability of flip chip GaN-based light emitting diode

Effects of ultrasonic bonding parameters on reliability of flip chip GaN-based light emitting diode

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This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes (flip chip LEDs) on Si substrates.The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated.In the sequent aging tests,samples were driven with a constant current of 80 mA for hundreds hours at the room temperature.It was found that the electroluminescence (EL) intensity variation had a large correlation to the ultrasonic power,and then to the bonding temperature and force.A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly.It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface.The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump.As a result,delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.

light emitting diode (LED)flip chip LEDelectroluminescence (EL) intensity, ultrasonic bondingdelamination

YANG Lian-qiao、YUAN Fang、ZHANG Jian-hua

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Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China

School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China

国家自然科学基金National Key Technology Research and Development Program of the Ministry of Science and Technology of ChinaProgram for the New Century Excellent Talents in University

506751302011BAE01B14NCET-07-0535

2011

10.1007/sl1741-011-0734-3

上海大学学报(英文版)
上海大学

上海大学学报(英文版)

影响因子：0.196
ISSN：1007-6417
年,卷(期)：2011.15(4)
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