单晶SiC的化学机械抛光及辅助技术的研究进展
Research progress of chemical mechanical polishing and auxiliary technology of single crystal SiC
张佩嘉 1雷红1
作者信息
摘要
由于单晶碳化硅(SiC)的传统化学机械抛光(chemical mechanical polishing,CMP)技术加工效率低,故提高SiC表面质量和材料去除率成为研究热点.总结了 CMP中抛光液的主要成分,比较了 CMP辅助抛光技术对单晶SiC抛光性能和作用机理的影响,并对单晶SiC-CMP技术的未来发展进行了展望.
Abstract
The traditional chemical mechanical polishing(CMP)technology for single crystal silicon carbide(SiC)faces challenges with low processing efficiency.Consequently,improving surface quality and material removal rates of SiC has emerged as a research focal point.This paper provides a summary of the main components of CMP polishing liquids,compares the effects of CMP-assisted polishing technology on the performance and mechanisms of single crystal SiC polishing,and offers prospects for the future development of CMP for single crystal SiC.
关键词
碳化硅/化学机械抛光/CMP辅助技术/抛光速率Key words
silicon carbide(SiC)/chemical mechanical polishing(CMP)/CMP assisted technology/polishing rate引用本文复制引用
出版年
2024
NETL
NSTL
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