首页|Bi2S3/g-C3N4复合异质结的制备及催化性能

Bi2S3/g-C3N4复合异质结的制备及催化性能

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g-C3N4是一种典型的聚合物半导体,具有优异的热稳定性、化学稳定性,颇具催化应用前景.采用水热法制备了 Bi2S3/g-C3N4异质结复合材料,通过XRD、SEM、TEM、UV-Vis、FS等手段对样品的组成、形貌、结构和性能进行了表征分析,并模拟了可见光条件下,以甲基橙为降解对象时复合材料的催化性能.结果表明,复合催化剂的异质结结构显著提高了 g-C3N4的光催化性能:光照3 h时,Bi2S3/g-C3N4复合材料(Bi2S3质量分数达到50%)对甲基橙的降解率达到了 97.4%,远超 Bi2S3的8.9%与g-C3N4的38.6%.对Bi2S3/g-C3N4催化机理进行了研究:Bi2S3的加入拓宽了 g-C3N4的光吸收范围,与g-C3N4的异质结结构使光生电子-空穴对的分离效率得到了进一步提高,并延长了光生载流子的寿命,进而提高了g-C3N4的光催化性能.
Preparation and photocatalytic property of Bi2S3/g-C3N4 heterojunction composite catalyst
As one kind of typical polymer semiconductor,g-C3N4 is a promising photocatalyst material with excellent thermal and chemical stability.In this paper,Bi2S3/g-C3N4 composite catalysts were prepared by hydrothermal method.The composition,morphology,structure and properties of the sample were characterized by XRD,SEM,TEM,UV-Vis and FS,respectively.The catalytic properties of Bi2S3/g-C3N4 composites were evaluated through degradation of methyl orange(MO)under the condition of simulating solar light.The results showed that the heterojunction structure of the composite catalyst significantly enhanced the photocatalytic performance of g-C3N4.The decomposition rate of MO by Bi2S3/g-C3N4 composite photocatalyst for 3 h was far higher than that of pure Bi2S3 and g-C3N4,which was 8.9%and 38.6%,respectively,with the highest value of 97.4%when the mass fraction of Bi2S3 reached 50%.The mechanism of Bi2S3/g-C3N4 composites with enhanced photocatalytic activity was studied.The addition of Bi2S3 significantly expanded the light absorption range of g-C3N4 and the construction of heterojunction with g-C3N4,which could promote the effective separation of photogenerated carriers and extend the carrier life,thus improving the photocatalytic performance of Bi2S3/g-C3N4 composite catalysts.

composite catalysthydrothermalgraphitic carbon nitride(g-C3N4)Bi2S3methyl orange(MO)degradation

丁浩源、肖龙飞、林琳、陈义军

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上海交通大学材料科学与工程学院,上海 200240

上海应用技术大学化学与环境工程学院,上海 201418

纳米技术及应用国家工程研究中心,上海 200241

复合催化剂 水热 石墨相氮化碳 Bi2S3 甲基橙 降解

2024

应用技术学报
上海应用技术学院

应用技术学报

影响因子:0.195
ISSN:2096-3424
年,卷(期):2024.24(3)