石河子大学学报(自然科学版)2024,Vol.42Issue(6) :670-676.DOI:10.13880/j.cnki.65-1174/n.2024.22.040

固定床直接法合成三乙氧基硅烷的研究

Study on direct synthesis of triethoxysilane in a fixed bed reactor

徐茂兰 籍煜雯 郭瑞丽 张建树 张金利 高娟 刘富贵 万伟
石河子大学学报(自然科学版)2024,Vol.42Issue(6) :670-676.DOI:10.13880/j.cnki.65-1174/n.2024.22.040

固定床直接法合成三乙氧基硅烷的研究

Study on direct synthesis of triethoxysilane in a fixed bed reactor

徐茂兰 1籍煜雯 1郭瑞丽 1张建树 1张金利 2高娟 3刘富贵 3万伟3
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作者信息

  • 1. 石河子大学化学化工学院/新疆兵团化工绿色过程重点实验室,新疆石河子 832003
  • 2. 石河子大学化学化工学院/新疆兵团化工绿色过程重点实验室,新疆石河子 832003;天津大学化工学院,天津 300072
  • 3. 新疆大全新能源有限公司,新疆 石河子 832000
  • 折叠

摘要

本文通过真空蒸发沉积预处理增强CuCl与硅颗粒之间的相互作用,从而提高直接合成三乙氧基硅烷的反应效率.真空蒸发沉积法有利于促进氯化亚铜沉积到硅颗粒表面,形成Cu3Si活性相.在固定床反应器中,对预处理样品进行催化活性评价,研究不同铜物种对直接合成三乙氧基硅烷的影响.考察了预处理温度、预处理时间、及不同反应温度等因素对硅粉转化率、三乙氧基硅烷选择性和收率的影响.在最优工艺条件,硅粉的最大转化率为5.79%,三乙氧基硅烷选择性为83.48%.采用XRD、SEM对预处理样品进行了表征,以及原子吸收测定预处理样品中不同铜物种的含量,结果表明Cu3Si是催化合成三乙氧基硅烷的活性中心.

Abstract

In this paper,the interaction between CuCl catalyst and silica particles is enhanced by vacuum evaporation deposition pre-treatment,which improves the reaction efficiency of direct synthesis of triethoxysilane.The vacuum evaporation deposition is favourable for promoting the deposition of cuprous chloride on the surface of silicon particles,and then the Cu3Si active phase is formed.The cata-lytic activity of pretreated samples was evaluated in a fixed-bed reactor to study the effect of different copper species on the direct syn-thesis of triethoxysilanes.And the effects of influencing factors,such as pretreatment temperature,pretreatment time,and different re-action temperatures on Si conversion,triethoxysilane selectivity and yield were investigated.Under the optimum conditions,the maxi-mum conversion of Si could reach 5.79%,and the triethoxysilane selectivity was 83.48%.The pretreated samples were characterized by XRD and SEM,and the the content of different copper species in the samples were determined with the atomic absorption spectrum,these results show that Cu3Si is the active phase that catalyses the synthesis of triethoxysilane.

关键词

三乙氧基硅烷/氯化亚铜/预处理/Cu3Si/蒸发沉积

Key words

triethoxysilane/cuprous chloride/pretreatment/Cu3 Si/evaporation deposition

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出版年

2024
石河子大学学报(自然科学版)
石河子大学

石河子大学学报(自然科学版)

CSTPCD北大核心
影响因子:0.662
ISSN:1007-7383
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