Comparative Analysis of Domestic and Foreign Silicon Carbide Standards
In order to explore the situation and differences between domestic and foreign standards for silicon carbide,this paper investigates,analyzes,and selects Chinese national and sectoral standards,international standards,relevant standards from the United States,Europe,Japan,Russia,and Romania.The physical properties of SiC,chemical analysis methods for SiC abrasives,chemical analysis methods for refractory materials containing SiC,and product specifications for SiC wafers are selected for standards comparison.Through comparison,it can be concluded that:(1)There are foreign standards for the physical and chemical properties of silicon carbide products.Some indicators,such as vibration density,specific surface area,cleanliness,toughness,and conductivity,are not included in the national standards and actual quality control of some enterprises in China;(2)Developed countries have divided silicon carbide sand and micro powder products into multiple brand specific products based on their different uses and the principles of matching,specialized,precision,and comprehensive utilization.The enterprise standard index requirements for specific products are also different,which provides producers and users with the best combination point and maximizes the benefits of the products;(3)From the comparison results of chemical analysis methods for silicon carbide abrasives and refractory materials containing silicon carbide,it can be seen that the comparison indicators of China's national standards are relatively complete compared to the ones of developed countries such as the United States,the European Union,and Japan;(4)From the comparison results of relevant standards for silicon carbide wafer products,it can be seen that China have developed relevant national standards for silicon carbide single crystal polishing wafers and wafer testing,while the standards of developed countries such as the United States,the European Union,and Japan do not include them.In terms of the testing environment for surface defects of silicon carbide epitaxial wafers,China's national standards have higher requirements compared to European Union and Japanese standards.
国家科技期刊平台
NSTL
万方数据
维普
