Interpretation of GB/T 43885《Silicon carbide epitaxial wafers》
Silicon carbide epitaxial wafers have wide band gap,high breakdown electric field,high saturation drift rate,high thermal conductivity and other excellent electrical properties,especially suitable for the production of high power,high frequency,high temperature and radiation resistance electronic devices,in solar and wind power generation,rail transit,smart grid,electric vehicles and other fields have a wide range of applications.The formulation of this standard is of pivotal significance to standardize the technical indicators of silicon carbide epitaxial wafers,ensure that the overall research and development and industrialization level of domestic silicon carbide epitaxial wafers closely follow the international development trend,and ensure the safety of domestic supply chain
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