退火对双离子束沉积的HfTaO薄膜结构和电学性质的影响
The influence of PDA on HfTaO films deposited by DIBSD technology
董尧君 1余涛 1金成刚 1诸葛兰剑2
作者信息
- 1. 苏州大学物理科学与技术学院,江苏苏州215006;江苏省薄膜材料重点实验室,江苏苏州215006
- 2. 苏州大学物理科学与技术学院,江苏苏州215006;苏州大学分析测试中心,江苏苏州215123
- 折叠
摘要
利用双离子束沉积系统沉积了HfTaO薄膜,并研究了退火对HfTaO薄膜的结构和电学性质的影响.将HfTaO薄膜分别在900℃和1000℃下进行真空退火.利用SEM,EDXS,XPS,XRD和AFM对退火前后HfTaO薄膜的成分和结构进行分析；并对退火前后的电学特性C-V,G-V和I-V进行研究.高温退火后发现:由于Ta的掺入,HfTaO薄膜的结晶温度提高1000℃左右.退火后HfTaO薄膜虽然积累区电容有所减小,但是薄膜的氧化层固定电荷Qf,氧化层陷阱电荷Qot和界面缺陷电荷密度Dit(Hill-Coleman方法得到)都有所减小；此外薄膜的漏电流在退火后也相应的减小.
Abstract
The structural and electrical properties of HfTaO films fabricated by Dual Ion Beam Sput-tering Deposition (DIBSD) technology are investigated in this research. After the films had been de-posited , they were annealed in vacuum at 900℃ and 1 000℃ , respectively. The chemical composi-tion and the structure of HfTaO films in relation to the PDA process were examined by SEM, EDXS, XPS, XRD and AFM, respectively. The electrical characteristics of HfTaO films are presented by Capacitance-Voltage (C-V) , Conductance-Voltage (G-V) and Current Density-Voltage (I-V) meas-urements. The crystallization temperature increases due to the doping with Tantalum. The accumula-tion capacitor ( Cacc) decreased a little followed by PDA. After annealing, the fixed oxide charge density and the oxide trapped charge density both reduced. The Dit of the annealed samples de-creased which is calculated by Hill-Coleman method. The leakage current density of HfTaO films re-duces with PDA process as well.
关键词
HfTaO薄膜/退火/结构/电学性质Key words
HfTaO/PDA/structure/electrical characteristics引用本文复制引用
出版年
2012
NETL
NSTL
维普
万方数据