栅场板对提升AlGaN/GaN 高电子迁移率晶体管(HEMT)击穿电压的物理机理以及相关理论问题缺乏深入的研究.本文通过在传统的AlGaN/GaN HEMT结构中引入栅场板来调控器件内部的电场分布以提高器件的击穿电压,并基于Silvaco TCAD软件对器件进行了建模.通过模拟计算研究了栅场板长度、厚度以及绝缘介质材料对器件沟道电场分布及击穿电压调制作用.结果表明:沟道电场峰值随栅场板长度增加而降低,但是当栅场板长度增加到某一数值继续增长的时候,反而会引起沟道电场峰值降低;栅场板厚度对沟道电场的分布几乎没有影响;栅场板下绝缘介质介电系数越大,沟道峰值电场强度越小;栅场板长度为2.00 µm时,器件击穿电压高达800 V.
Regulation of Gate-field Plate on Breakdown Characteristics of AlGaN/GaN HEMT
The physical mechanism and related theoretical issues of improving the breakdown voltage of AlGaN/GaN High Electron Mobility Transistor(HEMT)by gate field plate are not studied deeply.In this paper,a gate-field plate is introduced into the tradition-al AlGaN/GaN HEMT structure to regulate the electric field distribution within the device and increase the breakdown voltage of the device.The device is modeled based on Silvaco TCAD software.The effects of gate field plate length,thickness and insulating mate-rial on the channel electric field distribution and breakdown voltage modulation of the device are studied by simulation calculation.The results show that the peak value of the channel electric field decreases with the increase of the length of the gate field plate,but when the length of the gate field plate increases to a certain value,the peak value of the channel electric field decreases;The thick-ness of grid field plate has little effect on the distribution of channel electric field;The higher the dielectric coefficient of the insulat-ing medium under the grid field plate,the smaller the peak electric field intensity of the channel;the device breakdown voltage is more than 800 V when the length of the gate field plate is 2.0 µm.
AlGaN/GaN high electron mobility transistorbreakdown characteristicspeak electric fieldgate-field plate
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