Synergy of SHA and TT-LYK in CMP of cobalt-based barrier integrated circuits
To address the issues of poor Cu/Co removal rate(RR)selectivity and vulnerability to corrosion in the copper(Cu)interconnection Co barrier layer of integrated circuits during the chemical mechanical planarization(CMP)process,the effects and action mechanisms of the novel complexing agent salicyl-hydroxamic acid(SHA)and the inhibitor 2,2′-{[(methyl-1H-benzotriazol-1-yl)methyl]imino}bis-etha-nol(TT-LTK)on Co-based barrier layer CMP were investigated through experiments such as CMP.The results indicate that under polishing conditions,SHA exhibits complexing effects on both Cu and Co,while TT-LTK has no inhibitory effects on Co but shows significant inhibition on Cu.Under static conditions,SHA still exhibits complexing effects on Co but inhibition effects on Cu,while TT-LTK demonstrates good corrosion inhibition effects on both Cu and Co.It was also found that the synergistic use of SHA and TT-LTK can achieve ideal Cu/Co RR and selectivity ratios,while inhibiting the Cu/Co corrosion potential difference to 13 mV.The research opens up new ideas for the application of SHA and TT-LTK in CMP of Cu interconnect Co-based barrier integrated circuits.
chemical mechanical planarizationcomplexing agentcorrosionSHATT-LYK
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