An Analysis of the Discharge Process of Internal Void Defects of Insulators under Asymmetric Oscillating Wave Voltage
There have been many studies on the partial discharge(PD)detection under oscillating waves voltage,but the development process of discharge under oscillating wave voltage still needs to be studied.In this study,we made cross-linked polyethylene(XLPE)insulation samples with internal void defects and built the PD experimental platform under power frequency AC voltage and asymmetric oscillating wave voltage;then we performed PD experiments on samples of the same equivalent frequency under the two voltages and collected and analyzed the PD data,so that the PD characteristic parameters could be extracted to make the phase resolved partial discharge(PRPD)patterns.The experiments show that under the same equivalent frequency and applied voltage amplitude,the number of discharges at the asymmetric oscillation wave voltage is less and the amplitude of the discharges is greater than those under the AC voltage for the same time duration.The discharge process under a single period of asymmetric oscillating wave voltage can be divided into three stages-the initial electron accumulation stage,the PD generation and maintenance stage,and the discharge extinction stage.The low-amplitude oscillation phase of asymmetric oscillation waves increases the probability of charge accumulation in internal void defect,which is conductive to shorten the discharge time delay at the next oscillation wave and excite a higher amount of discharge.
cross-linked polyethylene(XLPE)asymmetric oscillating wave voltageinternal void defectpartial discharge(PD)discharge process