Design and simulation of AlN-based 3D-MSM UV detectors with different electrode spacings
Metal-semiconductor-metal(MSM)UV detectors are commonly employed in various fields,including UV antivirus applications,optical fiber communication,missile tracking,and aerospace.A 3D-MSM UV detector utilizing aluminum nitride(AlN)was designed based on the traditional MSM architecture.This study created MSM and 3D-MSM detectors with varying electrode spacings of 1,5,10,and 15 μm and utilized APSYS simulation software to analyze how different performance parameters—such as photocurrent,dark current,responsivity,photoelectric response time,and external quantum efficiency—affect the performance of both AlN-based traditional MSM detectors and 3D-MSM detectors.The simulation results indicate that the introduction of the 3D structure modifies the internal electric field distribution and the carrier migration path within the device,resulting in improved responsivity and reduced response time of detectors.Moreover,the data suggest that the larger the electrode spacing,the more pronounced the enhancement in the photoelectric performance of the 3D-MSM detector compared to that of the traditional MSM detector.
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