Effect of Al2O3 layer thickness on energy storage performances of PbZrO3/Al2O3 heterostructure thin films
In order to improve the energy storage density of Pt/PbZrO3/Pt dielectric capacitors,PbZrO3/Al2O3 heterostructure thin films were prepared on the Pt/Ti/SiO2/Si substrate,where the Al2O3 layers with a thickness from 0 nm to 10 nm were deposited by thermal evaporation and natural oxidation methods.PbZrO3 films were prepared by a chemical solution deposition method,and the effect of Al2O3 layer thickness on the energy storage performances of PbZrO3/Al2O3(PZO/AO)heterostructure thin films was studied.The results show that the electrical breakdown strength of PZO/AO gradually increases with the AO layer thickness,and the characteristics of polarization versus electric field(P-E)hysteresis loop changes from antiferroelectric form to ferroelectric form.The maximum energy storage density of 21.2 J/cm3 can be achieved when the thickness of AO layer is 5 nm.
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