首页|0.94(Mg1-xZnx)TiO3-0.06(Ca0.8Sr0.2)TiO3微波介质陶瓷的制备及性能

0.94(Mg1-xZnx)TiO3-0.06(Ca0.8Sr0.2)TiO3微波介质陶瓷的制备及性能

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为了降低MgTiO3-(Ca0.8Sr0.2)TiO3(MT-CST)微波介质陶瓷的烧结温度,改善其微波介电性能,采用化学沉淀法对MT-CST陶瓷进行了 A位Zn离子掺杂,研究了 Zn离子掺杂对MT-CST陶瓷的微观结构、烧结温度和微波介电性能的影响.结果表明,利用Zn2+取代Mg2+可以增加陶瓷的密度,降低介电损耗,使陶瓷的品质因数值得到有效提升,并且成功降低MT-CST陶瓷的烧结温度至1 125 ℃.制备的陶瓷具有优异的微波介电性能:介电常数约为21.6,品质因数约为50800GHz,谐振频率温度系数约为0.24 × 10-6/℃.
Preparation and properties of 0.94(Mg1-xZnx)TiO3-0.06(Ca0.8Sr0.2)TiO3 microwave dielectric ceramics
In order to reduce the sintering temperature of MgTiO3-(Ca0.8Sr0.2)TiO3(MT-CST)microwave dielectric ceramics and improve their microwave dielectric properties,the A-site Zn2+doping was performed on MT-CST ceramics by chemical precipitation method,the effects of Zn2+doping on the microstructure,sintering temperature and microwave dielectric properties of MT-CST ceramics were studied.The results show that the substitution of Mg2+by Zn2+can increase the density of ceramics,reduce the dielectric loss and improve quality factor value.The sintering temperature of MT-CST ceramics can be successfully reduced to 1 125 ℃.The as-prepared ceramics have excellent microwave dielectric properties,with dielectric constant of 21.6,quality factor of 50 800 GHz and temperature coefficient of resonance frequency of 0.24 × 10-6/℃,respectively.

MT-CST ceramicZn2+dopingchemical precipitation methodmicrostructuresintering temperaturemicrowave dielectric propertydensityquality factor

张帆、李金睿、张雪、王新、杨云洪

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沈阳工业大学材料科学与工程学院,辽宁沈阳 110870

营口菱镁化工集团有限公司镁化工研究院,辽宁营口 115100

MT-CST陶瓷 Zn离子掺杂 化学沉淀法 微观结构 烧结温度 微波介电性能 密度 品质因数

2024

沈阳工业大学学报
沈阳工业大学

沈阳工业大学学报

CSTPCD北大核心
影响因子:0.62
ISSN:1000-1646
年,卷(期):2024.46(6)