首页|聚合物基透明导电薄膜断裂韧性的测量方法

聚合物基透明导电薄膜断裂韧性的测量方法

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在航空透明件领域,厚聚合物基底上透明导电薄膜的断裂韧性是量化抗开裂性的关键力学特性,因此基于纳米压痕和通道开裂试验评估了薄膜的断裂韧性.采用磁控溅射法将氧化铟锡(ITO)薄膜沉积在聚碳酸酯(PC)基底上.纳米压痕试验中,纳米压痕在ITO薄膜上引起脆性断裂,通过对所得的载荷-深度曲线进行积分来计算断裂韧性;通道开裂试验中,使用原位拉伸法获得开裂应变,并结合力学模型计算断裂韧性.结果表明,不考虑残余应力时,2 种测试方法获得了相对一致的断裂韧性,500 nm厚ITO薄膜的断裂韧性为 1.62~1.81 MPa·m1/2;对于 200 nm以下厚度的薄膜或存在大残余应力的薄膜,宜选择通道开裂试验以确定断裂韧性.
Fracture Toughness Measurement of Transparent Conductive Films Deposited on Polymer Substrates
In the field of aerospace transparencies,the fracture toughness of thin transparent conductive films on thick polymer substrates is the key mechanical property to quantify the crack resistance.Therefore,the fracture toughness is evaluated based on nanoindentation and channel cracking tests.Indium tin oxide(ITO)films are deposited on polycarbonate(PC)substrates by magnetron sputtering.Brittle fracture is induced on the ITO films by nanoindentation,and fracture toughness is calculated by integrating the load-depth curves;crack strain of channel crack is obtained through the in situ scanning electron microscopy(SEM)test under uniaxial tension,and fracture toughness is calculated based on the mechanical model.The results show that relatively consistent fracture toughness is obtained by the above two methods without considering residual stresses,with the fracture toughness of 500 nm thick ITO films ranging from 1.62 to 1.81 MPa·m1/2.Of these,the channel cracking test is preferable for determining fracture toughness for thin films below 200 nm thick or films with large residual stresses.

transparent conductive films on polymer substratesfracture toughnessnanoindentationchannel crackingin situ test

周佳丽、张旋、张晓锋、颜悦

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中国航发北京航空材料研究院,北京 100095

北京市先进运载系统结构透明件工程技术研究中心,北京 100095

北京航空材料研究院股份有限公司,北京 100095

聚合物基透明导电薄膜 断裂韧性 纳米压痕 通道开裂 原位试验

2024

实验室研究与探索
上海交通大学

实验室研究与探索

CSTPCD北大核心
影响因子:1.69
ISSN:1006-7167
年,卷(期):2024.43(2)
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