Research on Aging Failure of Photovoltaic Cells and Arrays
To study the aging failure causes of solar cells and arrays,an aging fault identification model is established based on the solar cell equivalent circuit,and verified by comparison with the experimental data.The global root mean square error of theoretical fitting and experimental data before and after the aging of monocrystalline silicon(gallium arsenide)cell is less than 0.11 mA(0.59 mA),which shows the model is correct.Then,the effects of diode ideality factor n,series resistance Rs and parallel resistance Rsh on the maximum output power Pmax of monocrystalline silicon(gallium arsenide)cell are compared and studied.The Pmax of monocrystalline silicon and gallium arsenide cells are found to decrease with either n or Rs increasing,but increases with Rsh increasing.The effect of n on monocrystalline silicon(gallium arsenide)cell is basically consistent.Compared with gallium arsenide cell,Rs and Rsh have a greater effect on silicon cells.The reason is that the gallium arsenide cell has strong anti-aging capability.Finally,the relationships between silicon array Pmaxof 4×4 BL,HC,TCT,NS and a single cell n,Rs,Rsh,are studied.The results show that the change trends of the four arrays Pmax with n,Rs,Rsh,are consistent with the mentioned conclusions.In addition,the descending order of array Pmax under the influence of Rsis BL＞HC＞TCT =NS.The reason is that there are many series branches of TCT and NS arrays,and more cells participate in shunt.Therefore,the failure of a single cell Rs in the array has little impact on the output power of the array.The research results provide theoretical guidance for the diagnosis of aging and failure in batteries and arrays.
万方数据
维普
