Solar-blind Ultraviolet Photodetectors Based on Ultrathin ZnS Nanosheets
The performance of solar-blind UV photodetectors depends on the quality of semiconductor materials.Therefore,the development of high-quality semiconductor materials with solar-blind ultraviolet(UV)absorption ability is the key to build high-performance solar-blind UV photodetectors.The experiment uses a solvothermal strategy to synthesize ultrathin ZnS nanosheets with thickness of 2.2 nm and size of 400 nm～4 μm.Notably,these ZnS nanosheets display a sharp and strong absorption peak at ca.279 nm and a bandgap of ca.4.44 eV,indicating their ability to absorb solar-blind UV light.Considering their unique absorption properties,the as-prepared ZnS nanosheets are utilized as photoactive elements to fabricate self-powered photoelectrochemical-type photodetectors for detecting solar-blind UV light.These photodetectors exhibit excellent spectral selectivity(i.e.,the solar-blind/UV(R275 nm/R290 nm)rejection ratios of ca.43),response performance(i.e.,the on/off ratio of 3 500,the photoresponsivity of 1.4 mA/W,the rise/decay time(0.3 s/0.4 s),the detectivity of 1.7×1012 Jones)and long-term stability.These high-performance solar-blind UV photodetectors shows that inorganic ZnS materials have great potential in the fields of detection,fire monitoring and optical communication.
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