Dual Gate液晶显示屏栅极制程断路缺陷的分析与改善
Analysis and Improvement of Line Open Defects in Gate Manufacturing Process of Dual Gate LCD
杨迪一 1孔繁林 1胡兴兴 1夏莹莹 1黄小平 2吴成业 1郝静 1文鑫 1莫艳1
作者信息
- 1. 武汉京东方光电科技有限公司,湖北 武汉 430040
- 2. 成都中电熊猫显示科技有限公司,四川 成都 610200
- 折叠
摘要
文章探究了光刻工序的水汽和ITO刻蚀工序的药液结晶对Dual Gate产品栅极制程的断路影响,通过DOE试验得到影响因子的最佳改善条件,使55寸Dual Gate产品栅极制程的断路缺陷发生率整体降低36%,为公司带来80.2万元的月度收益,能够对其他高端产品断路缺陷的改善思路、新工艺设备的设计改进,提供参考.
Abstract
This paper explores the impact of aqueous vapor in the photolithography process and crystallization in the ITO etching process on Gate manufacturing process of Dual Gate products,and proposes effective improvement plans.After the introduction of the optimal improvement conditions,the overall occurrence rate of line open defects in Gate process of the 55"UHD Dual Gate product was reduced by 36%,which gives the company a monthly income of 802000 yuan.It can provide important reference value for the improvement of line open defects in high-end products such as Dual Gate/Triple Gate and the design improvement of new process equipment in the future.
关键词
双栅/断路/试验设计Key words
Dual Gate/line open/DOE引用本文复制引用
出版年
2024
NETL
NSTL
万方数据