首页|施主掺杂提高ZnO压敏电阻的冲击稳定性

施主掺杂提高ZnO压敏电阻的冲击稳定性

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研究了铝铟共掺杂对ZnO压敏电阻的微观结构和电学性能的影响,特别是浪涌冲击稳定行为.采用X射线衍射、扫描电子显微镜对ZnO压敏电阻的微观结构进行了表征,通过电流—电压测试、脉冲电流冲击测试和电容—电压测试对电性能进行了评估.结果表明:当Al3+和In3+掺杂量分别为 0.0008 mol%和 0.0033 mol%时,ZnO压敏电阻表现出了最佳的电性能;此时的电位梯度为 95.3 V·mm-1、非线性系数为 74、残压比为 2.43.另外,ZnO压敏电阻在 8/20 μs 10 kA电流下冲击 20 次后,正反压敏电压变化率分别为+3.30%和-6.67%.
Improvement in Impact Stability of ZnO Varistors through Donor Doping
The effects of aluminum indium codoping on the microstructure and electrical properties of ZnO varistors,especially the surge impact stability,were studied.The microstructure was characterized by using X-ray diffraction(XRD)and scanning electron microscopy(SEM).The electrical properties were evaluated by using current-voltage test,pulsed current impulse test and capacitance-voltage test.The sample doped with 0.0008 mol%Al3+ and 0.0033 mol%In3+ exhibited excellent electrical properties,with breakdown voltage gradient of 95.3 V·mm-1,nonlinear coefficient of 74 and residual voltage ratio of 2.43.In addition,after 20 shocks at 8/20 μs 10 kA current,the positive and negative voltage change rates were +3.30%and-6.67%,respectively.

ZnO varistorsdonor dopingelectrical propertiessurge impact stability

杨莉禹、任鑫、宁宇、刘晓曼、高丽、游俊玮、姚政

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上海大学 理学院 纳米科学与技术研究中心,上海 200444

ZnO压敏电阻 施主掺杂 电性能 浪涌冲击稳定性

上海市自然科学基金

17ZR1410300

2024

陶瓷学报
景德镇陶瓷学院

陶瓷学报

CSTPCD北大核心
影响因子:0.7
ISSN:1000-2278
年,卷(期):2024.45(2)
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