弹载芯片在强冲击环境下的损伤边界
Strong Impact Damage Boundary of Missile-borne Chips
王磊 1刘振亭 1刘星 2马生荣 3朱天社3
作者信息
- 1. 西安工业大学材料与化工学院,陕西 西安 710021
- 2. 西安工业大学电子信息工程学院,陕西 西安 710021
- 3. 西北工业集团,陕西 西安 710043
- 折叠
摘要
针对弹载芯片结构在强机械冲击环境下冲击响应谱损伤边界不确定和不准确的问题,将芯片等效为单自由度无阻尼系统并进行冲击响应分析,建立结构应力响应与伪速度冲击响应谱之间的联系;对弹载芯片结构在不同频率范围内冲击载荷下的响应进行分析,构造损伤边界并通过临界加速度信号对冲击响应谱损伤边界进行修正;采用有限元仿真软件对冲击载荷下的弹载芯片结构进行仿真分析,结果表明,临界应力值与修正后损伤边界符合较好.研究结果可以为集成电路在强机械冲击环境下的可靠性设计和失效分析提供理论依据.
Abstract
Aiming at the uncertain and inaccurate damage boundary of the shock response spectrum of the mis-sile-borne chip structure in the strong mechanical shock environment,the chip was equivalent to a single-degree-of-freedom undamped system and the shock response analysis was carried out,and the structural stress response and pseudo-velocity shock were established.The response of the missile-borne chip structure spectrum was ana-lyzed under the impact load in different frequency ranges,the damage boundary and correct the damage boundary of the shock response spectrum were constructed through the critical acceleration signal;the finite element simu-lation software was used to analyze the impact.The simulation analysis of the missile-borne chip structure under load showed that the critical stress value was in good agreement with the corrected damage boundary.The re-search results could provide a theoretical basis for the reliability design and failure analysis of integrated circuits under strong mechanical shock environment.
关键词
弹载芯片/强机械冲击环境/伪速度冲击响应谱/损伤边界/有限元仿真Key words
missile-borne chip/strong mechanical shock environment/pseudo velocity shock response spec-trum/damage boundary/finite element simulation引用本文复制引用
出版年
2024
NETL
NSTL
维普
万方数据