首页|In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells
In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells
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Focusing on the low open circuit voltage(VOC)and fill factor(FF)in flexible Cu2ZnSn(S,Se)4(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)2)and VSn defects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(CuSn defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the VOC deficit(VOC.def)is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01％power conversion efficiency(PCE)has been obtained.The syn-ergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.
Flexible solar cellsCu2ZnSn(S,Se)4Back interfaceDeep level defectsBarrier height
Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,Fujian,China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,Fujian,China
Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering,Changzhou 213164,Jiangsu,China
National Natural Science Foundation of ChinaScience and Technology Department of Fujian ProvinceFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China
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