首页|Amplified internal electric field of Cs2CuBr4@WO3-x S-scheme heterojunction for efficient CO2 photoreduction
Amplified internal electric field of Cs2CuBr4@WO3-x S-scheme heterojunction for efficient CO2 photoreduction
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Heterojunction construction,especially S-scheme heterojunction,represents an efficient universal strat-egy to achieve high-performance photocatalytic materials.For further performance stimulation of these well-designed heterojunctions,modulating the interfacial internal electric field(IEF)to steer dynamic charge transfer represents a promising approach.Herein,we realized the precise regulation of Fermi level(EF)of the oxidation semiconductor(mesoporous WO3-x)by tailoring the concentration of oxygen vacan-cies(VO),maximizing the IEF intensity in Cs2CuBr4@WO3-x(CCB@WO3-x)S-scheme heterojunction.The augmented IEF affords a robust driving force for directional electron delivery,leading to boosted charge separation.Hence,the developed CCB@WO3-x S-scheme heterojunction demonstrated outstanding pho-tocatalytic CO2 reduction performance,with the electron consumption rate(Relectron)up to 390.34 μmol g-1 h-1,which is 3.28 folds higher than that of pure CCB.An in-depth analysis of the S-scheme electron transfer mode was presented via theoretical investigations,electron spin resonance(ESR),photo-irradiated Kelvin probe force microscopy(KPFM),and in-situ X-ray photoelectron spec-troscopy(XPS).Finally,the CO2 photoconversion route was explored in detail using in-situ diffuse reflec-tance infrared Fourier transform spectroscopy(DRIFTS)and DFT theoretical calculations.
Cs2CuBr4WO3-xOxygen vacancyS-scheme heterojunctionInternal electric field
Zhijie Zhang、Xuesheng Wang、Junyi Qian、Jiayue Xu
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School of Materials Science and Engineering,Shanghai Institute of Technology,Shanghai 201418,China
National Natural Science Foundation of ChinaNatural Science Foundation of Shanghai
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