首页|Tuning the electronic conductance of REHx(RE=Nd,Ce,Pr)by structural deformation

Tuning the electronic conductance of REHx(RE=Nd,Ce,Pr)by structural deformation

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Hydride ion(H-)conductors have drawn much attention due to their potential applications in hydride-ion-based devices.Rare earth metal hydrides(REHx)have fast H-conduction which,unfortunately,is accompanied by detrimental electron conduction preventing their application as ion conductors.Here,REHx(RE=Nd,Ce,and Pr)with varied grain sizes,rich grain boundaries,and defects have been prepared by ball milling and subsequent sintering.The electronic conductivity of the ball-milled REHx samples can be reduced by 2-4 orders of magnitude compared with the non-ball-milled samples.The relationship of electron conduction and miscrostructures in REHx is studied and discussed based on experimental data and previously-proposed classical and quantum theories.The H-conductivity of all REHx is about 10-4 to 10-3 S cm-1 at room temperature,showing promise for the development of H-conductors and their applications in clean energy storage and conversion.

Hydride ion conductionElectron conductionNanosized grainCrystal defectElectron scattering

Shangshang Wang、Weijin Zhang、Jirong Cui、Shukun Liu、Hong Wen、Jianping Guo、Teng He、Hujun Cao、Ping Chen

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Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023,Liaoning,China

Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

State Key Laboratory of Catalysis,Chinese Academy of Sciences,Dalian 116023,Liaoning,China

National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaDalian Science and Technology Innovation FundLiaoning Revitalization Talents Program

2021YFB40006022198810122279130216330112023RJ016xLYC2002076

2024

10.1016/j.jechem.2024.04.006

能源化学
中国科学院大连化学物理研究所 中国科学院成都有机化学研究所

能源化学

CSTPCDEI
影响因子：0.654
ISSN：2095-4956
年,卷(期)：2024.95(8)