首页|Seed-assisted growth for high-performance perovskite solar cells:A review

Seed-assisted growth for high-performance perovskite solar cells:A review

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The rapid increase in the power conversion efficiency(PCE)of perovskite solar cells(PSCs)is closely related to the development of deposition techinique for perovskite layer.The high-quality perovskite film enables efficient charge transportation and less trap states,which are eventually translated into enhanced device performance.Seed-assisted growth(SAG)is a potential technique for depositing highly-crystallized perovskite films with preferential crystal orientation among the numerous approaches related to crystallization modulation.In this review,we summarize the recent advances in the SAG technique for both one-step and two-step processed perovskite films.Additionally,seeding at the buried interface and on the top surface are also introduced.We present different seeds and their cor-responding seeding mechanism in detail,such as inorganic nanomaterials,organic ammoniums,alkali metal halides,and perovskite seeds.Finally,challenges and perspectives are proposed to investigate the potential expansion of seeding engineering in high-performance PSCs,particularly large-area devices.

Perovskite solar cellSeedCrystallizationEfficiency

Zhimin Fang、Ting Nie、Jianning Ding、Shengzhong(Frank) Liu

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Institute of Technology for Carbon Neutralization,Yangzhou University,Yangzhou 225127,Jiangsu,China

Dalian National Laboratory for Clean Energy,iChEM,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023,Liaoning,China

Key Laboratory of Applied Surface and Colloid Chemistry,Ministry of Education,Shaanxi Key Laboratory for Advanced Energy Devices,Shaanxi Engineering Lab for Advanced Energy Technology,School of Materials Science and Engineering,Shaanxi Normal University,Xi'an 710119,Shaanxi,China

111 ProjectNational Natural Science Foundation of ChinaNational University Research Fund

B2100562174103GK202309020

2024

能源化学
中国科学院大连化学物理研究所 中国科学院成都有机化学研究所

能源化学

CSTPCDEI
影响因子:0.654
ISSN:2095-4956
年,卷(期):2024.96(9)