首页|In situ synthesis of SnPS3/Ti3C2Tx hybrid anode via molten salt etching method for superior sodium-ion batteries

In situ synthesis of SnPS3/Ti3C2Tx hybrid anode via molten salt etching method for superior sodium-ion batteries

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Recently,SnPS3 has gained attention as an impressive sodium-ion battery anode material because of its significant theoretical specific capacity derived from the conversion-alloying reaction mechanism.Nevertheless,its practical applicability is restricted by insufficient rate ability,and severe capacity loss due to inadequate electrical conductivity and dramatic volume expansion.Inspired by the electrochem-ical enhancement effect of MXene substrates and the innovative Lewis acidic etching for MXene prepa-ration,SnPS3/Ti3C2Tx MXene(T=—Cl and—O)is constructed by synchronously phospho-sulfurizing Sn/Ti3C2Tx precursor.Benefiting from the boosted Na+diffusion and electron transfer rates,as well as the mitigated stress expansion,the synthesized SnPS3/Ti3C2Tx composite demonstrates enhanced rate capa-bility(647 mA h g-1 at 10 A g-1)alongside satisfactory long-term cycling stability(capacity retention of 94.6%after 2000 cycles at 5 A g-1).Importantly,the assembled sodium-ion full cell delivers an impressive capacity retention of 97.7%after undergoing 1500 cycles at 2 A g-1.Moreover,the sodium storage mech-anism of the SnPS3/Ti3C2Tx electrode is elucidated through in-situ and ex-situ characterizations.This work proposes a novel approach to ameliorate the energy storage performance of thiophosphites by facile in-situ construction of composites with MXene.

ThiophosphitesSnPS3Ti3C2Tx MXeneLewis acidic etchingSodium-ion batteries

Longsheng Zhong、Ming Yue、Wenhu Xie、Hongxiao He、Yanhe Xiao、Baochang Cheng、Liangxu Lin、Shuijin Lei

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School of Physics and Materials Science,Nanchang University,Nanchang 330031,Jiangxi,China

Strait Institute of Flexible Electronics(SIFE,Future Technologies),Fujian Normal University,Fuzhou 350017,Fujian,China

2024

能源化学
中国科学院大连化学物理研究所 中国科学院成都有机化学研究所

能源化学

CSTPCDEI
影响因子:0.654
ISSN:2095-4956
年,卷(期):2024.98(11)