Research on physicochemical purification technology of high purity graphite products for SiC
By reviewing the existing graphite purification techniques,the concept,reaction mechanism and process of physicochemical purification methods are introduced,and three important technical indicators of physicochemical purification method are proposed,namely process gas selection,process furnace pressure selection and process temperature selection.According to the purification process,high purity graphite products for the third generation semiconductor SiC are tested.The results show that the purity of graphite productscan be stabilized at 99.9995％～99.9999％by physicochemical purification method,and B and Al elements in the high purity graphite products can be directly removed.
High purity graphite productsphysicochemistry purification methodSiCdirectional removal
万方数据
维普
