STUDY ON PID OF p-TYPE PERC BIFACIAL MONO-Si PV MODULES
This paper conducts an in-depth study on the potential induced degradation(PID)effect of p-type PERC bifacial mono-Si PV modules under negative bias and positive bias,and investigates the electrical performance recovery of such PV modules after PID effect occurs on the back.The research results show that:1)After conducting PID testing at a bias voltage of-1500 V,under standard test conditions(STC),the electrical performance on the back of this type of PV module sharply decreased after 96 h of PID testing.The electrical performance of such PV modules on the front side is also significantly affected.Under the condition of 200 W/m2 solar irradiance,the electrical performance loss of the front and back of such PV modules is more pronounced.After extending the PID test to 480 h,compared with the test results of 96 h,the maximum output power,open circuit voltage,and short-circuit current on the back of this type of PV module all showed varying degrees of recovery.This is because when the solar cell is under negative bias,positive charges are attracted to the AlOx/SiNx passivation stack,eliminating the field passivation effect of the passivation layer.However,as more positive charges are trapped in the AlOx/SiNx passivation stack,electron reversal layer is generated on the back of the solar cell,ultimately leading to an increase in the effective carrier lifetime of the solar cell.2)After 96 h of PID testing under a bias voltage of+1500 V,the electrical performance degradation on the front side of such PV modules can be ignored,and the electrical performance on the back side even slightly improves.This is because when the solar cell is under positive bias,negative charges are attracted to the back of the solar cell and then accumulate in the AlOx/SiNx passivation stack.These negative charges help to repel minority carriers(electrons)from the backside of silicon wafers,thereby improving the electrical performance of such PV modules.3)The PID-p effect on the back of such PV modules can be restored,and exposing the back of the PV module to ultraviolet light can significantly accelerate the recovery speed.For PV power generation systems with high operating voltage and operate outdoors,the back of such PV modules is minimally or even unaffected by the PID-p effect.
PERCbifacial mono-Si PV modulesPIDelectrical performancebias voltage
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