RESEARCH ON ELECTRON SELECTIVE CONTACT OF TOPCon SOLAR CELLS
Through Afors-Het simulation software,the TOPCon solar cell model is established and the effects of tunneling through the oxide SiO2 layer thickness,n+ poly-Si layer doping concentration,back-metal electrode work function and energy band offset of the SiO2/n+ poly-Si side on the performance of TOPCon solar cells are systematically analyzed.The simulation results show that the SiO2/n+ poly-Si stacked passivation structure can achieve better electron selective transport performance.It is the best process window when the thickness of the SiO2 layer is 1.1 nm and the doping concentration of the n+ poly-Si layer is 1×1020 cm-3.It also shows the great potential of improving the electron selective transport layer for the efficiency improvement of TOPCon solar cells.
solar cellspassivationelectronic propertiessimulation platformTOPCon
NETL
NSTL
万方数据
维普
