STUDY ON PERFORMANCE OF IN-SITU DOPED POLYSILICON PREPARED BY TUBE PECVD
The effects of deposition parameters of tube plasma enhanced chemical vapor deposition(PECVD)on the heavily doped polysilicon passivated contact(SiOx/Poly-Si(n+))of silicon solar cells are reported.The doped polysilicon of TOPCon solar cells is achieved by high temperature crystallization of deposited amorphous silicon.a-Si(n+)films with different thickness,crystallinity and doping concentration can be obtained by changing the deposition temperature,the flow rate of Ar and PH3,deposition RF power and other deposition parameters of PECVD.Then different Poly-Si(n+)films are obtained by annealing at high temperature,resulting in different characteristics of SiOx/Poly-Si(n+)passivated contact in terms of passivating quality and carrier selectivity.Finally,under the deposition temperature of 480 °C,Ar flow rate of 8 L/min,PH3 flow rate of 0.8 L/min,deposition RF power of 12000 W,annealing temperature of 920℃,the optimal double-side SiOx/Poly-Si(n+)/SiNx passivated contact is obtained.The minority lifetime reaches to 6445 μs,the implied open circuit voltage(iVoc)reaches to 742.7 mV,and the single-side saturation current density J0 is as low as 4.2 fA/cm2.
silicon solar cellspassivationpolycrystalline silicondopingplasma enhanced chemical vapor deposition
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